ROHM Unveils BD2311NVX-LB: Revolutionizing GaN Device Performance with Ultra-High-Speed Gate Driver

ROHM Unveils BD2311NVX-LB: Revolutionizing GaN Device Performance with Ultra-High-Speed Gate Driver

ROHM introduces the BD2311NVX-LB, an ultra-high-speed gate driver IC designed to optimize the performance of Gallium Nitride (GaN) devices. This innovative IC achieves nanosecond-level gate drive speeds, a breakthrough ideal for high-speed GaN switching.

Staff Thu, 11/09/2023 - 14:27

[original story: Circuit Digest]

Circuit Digest 09 Nov 08:57